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0AA01 LC151B LT3S31W B1286 12160 80020 212DH IRFSZ14A
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  EMB11 dual digital transistors (pnp+ pnp) features z two dta114e chips in a package z mounting possible with sot-563 automatic mounting machines z transistor elements are independ ent,eliminating interference z mouting cost and area be cut in half marking: b11 equivalent circuit absolute maximum ratings (t a =25 ) electrical characteristics (t a =25 ) parameter symbol test conditions min typ max unit input turn-on voltage v i(on) v o =-0.3v, i o =-10 ma -3 v input cut-off voltage v i(off) v cc =-5v, i o =-10 0 a -0.5 v output voltage v o(on) i o =-10 ma, i i =-0.5 ma -0.3 v input cut-off current i i v i =-5v -0.88 ma output cut-off current i o(off) v cc =-50v, v i =0 -0.5 a dc current gain g i v o =-5v, i o =-5ma 30 transition frequency f t v o =-10v, i o =-5ma, f =100mhz 250 mhz input resistance r 1 7 13 k ? resistance ratio r 2/ r 1 0.8 1.2 symbol parameter value units v cc supply voltage -50 v i c(max) output current -100 ma v i input voltage -40 to +10 v p d power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 sot-563 1 www.htsemi.com semiconductor jinyu 1 date:2011/ 05


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